Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer

被引：32

作者：

Lee, Sejoon ^{[1
]}

Shon, Yoon ^{[1
]}

Kim, Deuk Young ^{[1
]}

Kang, Tae Won ^{[1
]}

Yoon, Chong S. ^{[2
]}

机构：

[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期

关键词：

arsenic; Curie temperature; deep levels; dilute magnetic materials; ferromagnetic materials; g-factor; II-VI semiconductors; impurity states; magnetic hysteresis; magnetic semiconductors; wide band gap semiconductors; zinc compounds; THIN-FILMS; TRANSPARENT; EXCHANGE; GROWTH; ORIGIN;

D O I：

10.1063/1.3294635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Enhanced ferromagnetism was observed from the H2O2-treated p-type (Zn0.93Mn0.07)O:As layer. Compared with the untreated sample, the H2O2-treated sample showed the enlarged ferromagnetic hysteresis loop with approximately two-times-increased spontaneous magnetization. And also, in comparison with the untreated sample (T-C similar to 280 K), the H2O2-treated sample exhibited to have the increased T-C persisting up to above 350 K. These results were confirmed to originate from the enhanced p-d hybridization due to the decrease in negatively charged residual background carriers. This is because the increased effective g-factor resulting from the decrease in oxygen-related defects acting as native deep donors was observed from the H2O2-treated sample.

引用

页数：3

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