One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

被引：109

作者：

Fu, Qundong ^{[1
]}

Wang, Xiaowei ^{[2
]}

Zhou, Jiadong ^{[1
]}

Xia, Juan ^{[3
]}

Zeng, Qingsheng ^{[1
]}

Lv, Danhui ^{[2
]}

Zhu, Chao ^{[1
]}

Wang, Xiaolei ^{[4
]}

Shen, Yue ^{[5
]}

Li, Xiaomin ^{[5
]}

Hua, Younan ^{[5
]}

Liu, Fucai ^{[1
]}

Shen, Zexiang ^{[3
]}

Jin, Chuanhong ^{[2
]}

Liu, Zheng ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[3] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[4] Nankai Univ, Inst Modern Opt, Key Lab Opt Informat Sci & Technol, Minist Educ, Tianjin 300071, Peoples R China

[5] Wintech Nano Technol Serv Pte Ltd, Singapore 117684, Singapore

来源：

CHEMISTRY OF MATERIALS | 2018年 / 30卷 / 12期

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

DER-WAALS HETEROSTRUCTURE; RAMAN-SCATTERING; MOS2; GROWTH; LAYER; TRANSITION; ORIENTATION; TRANSISTORS; NANOSHEETS; SUBSTRATE;

D O I：

10.1021/acs.chemmater.7b05117

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Chemical vapor deposition (CVD) has proven its surpassing advantages, such as larger scale, interlayer orientation control, and clean interface, in the synthesis of transitional metal dichalcogenide (TMDC) semiconductor/semiconductor van der Waals (vdW) heterostructures. However, it is suffering problems of high melting points and low chemical reactivity of metal oxide feedstocks in the preparation of high-quality metal/semiconductor (M/S) TMDC vdW heterostructures. Here, for the first time, we report the synthesis of the M/S TMDC vdW heterostructure NbS2/MoS2 via a one-step halide-assisted CVD method, which effectively overcomes the drawbacks of metal oxide precursors. This one-step method provides the high quality and clean interface of the NbS2/MoS2 heterostructure, which has been proved by the transmission electron microscopy characterization. A mechanism that MoS2 finishes the growth first and subsequently serves as a superior substrate for the growth of NbS2 is proposed. This novel method will open up new opportunities in the syntheses of other M/S TMDC vdW heterostructures and will facilitate the research of the TMDC M/S interface.

引用

页码：4001 / 4007

页数：7

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