Two-dimensional dopant profiling by scanning capacitance force microscopy

被引：30
|
作者：
Kimura, K [1 ]
Kobayashi, K
Yamada, H
Matsushige, K
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
[2] Kyoto Univ, Int Innovat Ctr, Kyoto 6068501, Japan
来源：
APPLIED SURFACE SCIENCE | 2003年 / 210卷 / 1-2期
关键词：
scanning capacitance force microscopy; frequency modulation; angular frequency; lock-in amplifier;
D O I：
10.1016/S0169-4332(02)01486-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We developed scanning capacitance force microscopy (SCFM) capable of mapping local differential capacitance (00011), based on atomic force microscopy (AFM), by detecting an electrostatic force (ESF) between a tip and a sample. While an electric field alternating at an angular frequency (omega) is applied between the tip and the sample, an induced ESF oscillating at its third harmonic frequency (3omega), which contain information on partial derivativeC/partial derivativeV is detected using a lock-in amplifier (LIA). In this paper, we showed some dynamic-mode SCFM results obtained on a Si test sample. Clear dopant contrasts were obtained by dynamic-mode SCFM operated in air. An apparent position of the p-n junction was moved when an applied d.c. bias voltage was changed. A dynamic-mode SCFM image obtained in a vacuum condition utilizing frequency modulation (FM) detection method also showed clear dopant contrast. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：93 / 98
页数：6
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