Modeling the p-n junction i-u characteristic for an accurate calibration-free temperature measurement

被引:7
作者
Kanoun, O [1 ]
机构
[1] Univ Fed Armed Forces Munich, Inst Mess & Automatisierungstechn, Neubiberg, Germany
关键词
bipolar transistors; calibration; calibration-free measurement; diodes; modeling; parameter extraction; P-N junctions; temperature measurement;
D O I
10.1109/19.863946
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The p-n junction i-u characteristic model is decisive for the accuracy enhancement of calibration-free temperature measurement. In this paper, we give a survey of adapted physically-based p-n junction Cu characteristic models, such as the Ebers-Moll(2), the Ebers-Moll(3), and the Gummel-Poon model. Furthermore, we build new models through polynomial extensions to the fundamental Shockley model. The considered models were investigated with regard to the application of calibration-free temperature measurement; Experimental results show a model improvement with both physically and mathematically-based models.
引用
收藏
页码:901 / 904
页数:4
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