Single-parent evolution algorithm and the optimization of Si clusters

被引:196
作者
Rata, I [1 ]
Shvartsburg, AA
Horoi, M
Frauenheim, T
Siu, KWM
Jackson, KA
机构
[1] Cent Michigan Univ, Dept Phys, Mt Pleasant, MI 48859 USA
[2] York Univ, Dept Chem, N York, ON M3J 1P3, Canada
[3] York Univ, Ctr Res Mass Spectrometry, N York, ON M3J 1P3, Canada
[4] Univ Gesamthsch Paderborn, D-33095 Paderborn, Germany
关键词
D O I
10.1103/PhysRevLett.85.546
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We describe a novel method for the structural optimization of molecular systems. Similar to genetic algorithms (GA), our approach involves an evolving population in which new members are formed by cutting and pasting operations on existing members. Unlike previous GA's, however, the population in each generation has a single parent only. This scheme has been used to optimize Si clusters with 13-23 atoms. We have found a number of new isomers that are lower in energy than any previously reported and have properties in much better agreement with experimental data.
引用
收藏
页码:546 / 549
页数:4
相关论文
共 24 条
  • [1] Deaven DM, 1996, CHEM PHYS LETT, V256, P195, DOI 10.1016/0009-2614(96)00406-X
  • [2] Thermodynamics of global optimization
    Doye, JPK
    Wales, DJ
    [J]. PHYSICAL REVIEW LETTERS, 1998, 80 (07) : 1357 - 1360
  • [3] Structures of medium-sized silicon clusters
    Ho, KM
    Shvartsburg, AA
    Pan, BC
    Lu, ZY
    Wang, CZ
    Wacker, JG
    Fye, JL
    Jarrold, MF
    [J]. NATURE, 1998, 392 (6676) : 582 - 585
  • [4] High-resolution ion mobility measurements for silicon cluster anions and cations
    Hudgins, RR
    Imai, M
    Jarrold, MF
    Dugourd, P
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1999, 111 (17) : 7865 - 7870
  • [5] ACCURATE FORCES IN A LOCAL-ORBITAL APPROACH TO THE LOCAL-DENSITY APPROXIMATION
    JACKSON, K
    PEDERSON, MR
    [J]. PHYSICAL REVIEW B, 1990, 42 (06): : 3276 - 3281
  • [6] DISSOCIATION OF LARGE SILICON CLUSTERS - THE APPROACH TO BULK BEHAVIOR
    JARROLD, MF
    HONEA, EC
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1991, 95 (23) : 9181 - 9185
  • [7] COLLISION-INDUCED DISSOCIATION OF SILICON CLUSTER IONS
    JARROLD, MF
    BOWER, JE
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1988, 92 (20) : 5702 - 5705
  • [8] Ionization of medium-sized silicon clusters and the geometries of the cations
    Liu, B
    Lu, ZY
    Pan, BC
    Wang, CZ
    Ho, KM
    Shvartsburg, AA
    Jarrold, MF
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1998, 109 (21) : 9401 - 9409
  • [9] Structural information from ion mobility measurements: Effects of the long-range potential
    Mesleh, MF
    Hunter, JM
    Shvartsburg, AA
    Schatz, GC
    Jarrold, MF
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (40) : 16082 - 16086
  • [10] Silicon clusters of intermediate size: Energetics, dynamics, and thermal effects
    Mitas, L
    Grossman, JC
    Stich, I
    Tobik, J
    [J]. PHYSICAL REVIEW LETTERS, 2000, 84 (07) : 1479 - 1482