Simulation and Comparison of Current Voltage Characteristics of Si and Ge based Bio Field Effect Transistor by Varying Oxide Thickness to Get Better Sensitivity

被引：1

作者：

Layasree, S. ^{[1
]}

Deepak, A. ^{[1
]}

机构：

[1] Saveetha Univ, Saveetha Sch Engn, Saveetha Inst Med & Tech Sci, Dept Elect & Commun Engn, Chennai, Tamil Nadu, India

来源：

REVISTA GEINTEC-GESTAO INOVACAO E TECNOLOGIAS | 2021年 / 11卷 / 02期

关键词：

BIOFET; Silicon; Germanium; Oxide Thickness; Novel BioFET; NanoHub Simulation Tool; Nanotechnology; Conductance; FRACTURE;

D O I：

10.47059/revistageintec.v11i2.1737

中图分类号：

C93 [管理学];

学科分类号：

12 ; 1201 ; 1202 ; 120202 ;

摘要：

Aim: The current voltage characteristics of Silicon based BIOFET and Germanium based BIOFET are simulated by varying their oxide thickness ranging from 1nm to 100nm. Materials and Methods: The electrical conductance of Silicon based BIOFET (n=320) was compared with Germanium based BIOFET (n=320) by varying oxide thickness ranging from 1nm to 100nm in the NanoHub(C) tool simulation environment. Results: Germanium based BIOFET has significantly higher conductance than Silicon based BIOFET. The optimal gate oxide thickness for maximum conductivity was 1nm for Silicon based BIOFET and 35nm for Germanium based BIOFET. Conclusion: Within the limits of the study, Germanium based BIOFET with oxide thickness of 35nm offers the best conductivity.

引用

页码：1066 / 1083

页数：18

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