Implantation doping and hydrogen passivation of GaN

The possibility of p-type doping of GaN with Cd by ion implantation has been studied using the perturbed yy angular correlation spectroscopy (PAC). To determine the lattice site of the implanted ions and to discriminate between defects created by the heavy ion implantation and their interaction with implanted Cd-acceptors, both the group-III atom In-111 and the group-II acceptor Cd-111m have been implanted. The annealing of the implantation damage has been studied up to annealing temperatures of 1300 K. We also report on the atomic-scale observation of the formation of Cd-H pairs in GaN using the radioactive acceptor Cd-111m. This pair formation requires the electrical activation of the implanted accepters.