Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs

被引：6

作者：

Gong, Z ^{[1
]}

Niu, ZC ^{[1
]}

Fang, ZD ^{[1
]}

Miao, ZH ^{[1
]}

Feng, SL ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 01期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.1846146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [1 (1) over bar0] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable. (C) 2005 American Institute of Physics.

引用

页码：013104 / 1

页数：3

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