Stress study of thin As-Se-Ag films obtained by vacuum thermal evaporation and pulsed laser deposition

被引:0
|
作者
Petkova, T. [1 ]
Ilcheva, V. [1 ]
Petkov, P. [2 ]
Socol, G. [3 ]
Ristoscu, C. [3 ]
Sima, F. [3 ]
Mihailescu, C. N. [3 ]
Mihailescu, I. N. [3 ]
Popov, C. [4 ]
Boev, V. [1 ]
Reithmaier, J. P. [4 ]
机构
[1] Bulgarian Acad Sci, Inst Electrochem & Energy Syst, BU-1113 Sofia, Bulgaria
[2] Univ Chem Technol & Met, Dept Phys, BU-1756 Sofia, Bulgaria
[3] Natl Inst Lasers Plasma & Radiat Phys, Lasers Dept, Laser Surface Plasma Interact Lab, RO-77125 Magurele, Romania
[4] Univ Kassel, Inst Nanostruct Technol & Analyt, D-34132 Kassel, Germany
来源
关键词
Chalcogenide glasses; Thin films; Intrinsic stress; AMORPHOUS GE-SE; CHALCOGENIDE GLASSES;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin (As(2)Se(3))(100-x)Ag(x) (x = 0 - 25 mol.%) films have been obtained on glassy and silicon substrates by vacuum thermal evaporation and pulsed laser deposition from the corresponding bulk materials. The stress of the layers deposited on silicon cantilevers was measured by a cantilever technique, which is commonly applied to solid inorganic thin films. The correlation between the stress and the composition as a function of the film preparation methods has been investigated and discussed. We showed that the addition of silver leads to changes in the glass properties, such as an increase of the density and compactness, related to the modification of the stress values.
引用
收藏
页码:650 / 653
页数:4
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