On the high-dose effect in the case of ion implantation of silicon

In order to gain insight into the mechanism of the so-called high-dose effect, several experiments were performed with ion implantation of phosphorus into silicon. On the basis of experimental data, it is concluded that the effect under consideration is caused by the weakening of interatomic bonds in amorphous silicon heavily doped with phosphorus, and this is stimulated both by irradiation and increased temperature. An interruption in irradiation after the dose for amorphization is attained leads to the stabilization of the amorphous state. (C) 2004 MAIK "Nauka / Interperiodica".