Carrier dynamics with blue emission in asymmetrically coupled GaN/Al0.5Ga0.5N/GaN multiquantum wells

被引：3
作者：
Park, Young S. [1 ]
Im, Hyunsik [1 ]
Kang, T. W. [1 ]
机构：
[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 16期
关键词：
D O I：
10.1063/1.2730742
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Coupled multiquantum well structures consisting of GaN(10 angstrom)/Al0.5Ga0.5N(22 angstrom)/GaN(20 angstrom) bounded by Al0.5Ga0.5N (100 angstrom) barriers were characterized by photoluminescence measurements. The recombination dynamics of carriers localized in asymmetric double quantum wells were studied by analyzing temperature-dependent and time-resolved photoluminescence spectra. The authors observed carrier transfer between weakly and strongly localized states which resulted in a stronger blue emission with increasing temperature, and they analyzed its effects on the spectra in terms of the quantum confined screening effect. Time-resolved measurements yielded lifetimes of various transitions which had different origins ranging between similar to 120 and similar to 1300 ns.
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