Methods of Nano-crystallization of Thin Silicon Films

被引:0
作者
Kolodziej, Michal [1 ]
Kolodziej, Tomasz [2 ]
Kolodziej, Andrzej [2 ]
机构
[1] AGH Univ Sci & Technol, Dept Automat & Biomed Engn, PL-30059 Krakow, Poland
[2] AGH Univ Sci & Technol, Dept Elect, PL-30059 Krakow, Poland
来源
2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2015年
关键词
nano-crystalline materials; deposition; TEM; photovoltaic cells; silicon;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In the paper the authors are analyzing differences in the nature of crystallization between: the nano-crystallization during deposition in multilayer RF PECVD process, in which hydrogen concentration and other parameters were changing over time, and crystallization of the same samples during temperature annealing in the range 200-1000 degrees C. Observed behavior differs from columnar crystallization of mu c-Si:H films deposited in homogeneous process. The analysis is carried out with respect on application of the films to solar structures.
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页数:4
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