Fabrication and characterization of gated carbon nanotube emitters in a trench structure

被引：0

作者：

Liao, YF ^{[1
]}

She, JC ^{[1
]}

He, H ^{[1
]}

Deng, SZ ^{[1
]}

Chen, J ^{[1
]}

Xu, NS ^{[1
]}

机构：

[1] Sun Yat Sen Zhongshan Univ, State Key Lab Optoelect Mat & Technol, Guangzhou, Peoples R China

来源：

TECHNICAL DIGEST OF THE 17TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE | 2004年

关键词：

D O I：

10.1109/IVNC.2004.1354901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：66 / 67

页数：2

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