Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

被引：146

作者：

Im, Ki-Sik ^{[1
]}

Ha, Jong-Bong ^{[1
]}

Kim, Ki-Won ^{[1
]}

Lee, Jong-Sub ^{[1
]}

Kim, Dong-Seok ^{[1
]}

Hahm, Sung-Ho ^{[1
]}

Lee, Jung-Hee ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 03期

关键词：

GaN; MOSFETs; normally off; silicon substrate; 2-D electron gas (2DEG);

D O I：

10.1109/LED.2009.2039024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A normally off GaN MOSFET was proposed by utilizing an extremely high 2-D electron-gas density (> 10(14)/cm(2)) at an AlGaN/GaN heterostructure as source and drain, which can be obtained by controlling the tensile stress accompanied with the growth of GaN on silicon substrate. The fabricated MOSFET with an Al2O3 gate insulator exhibited excellent device performance, such as a threshold voltage of 2 V, drain current of 353 mA/mm, extrinsic transconductance of 98 mS/mm, and field-effect mobility of 225 cm(2)/V.s.

引用

页码：192 / 194

页数：3

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