Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 μm in thickness

We present a simple method for the elimination of cracks in GaN layers grown on Si (111). Cracking of GaN on Si usually occurs due to large lattice and thermal mismatch of GaN and Si when layer thicknesses exceeds approximately l mum. By introducing thin, low-temperature AIN interlayers, we could significantly reduce the crack density of the GaN layer. The crack density is practically reduced to zero from an original crack density of 240 mm(-2) corresponding to crack-free regions of 3 x 10(-3) mm(2). Additionally for the GaN layer with low temperature interlayers, the full width at half maximum X-ray (20 (2) over bar 24) rocking curve is improved from approximately 270 to 65 arcsec.