Design of wide-band antireflection coatings on GaAs substrates for long wavelength IR spectrum

被引：0
|
作者：
Nenkov, M. [1 ]
Gyoch, B. [1 ]
Pencheva, T. [1 ]
机构：
[1] Univ Rousse, Dept Phys, 8 Studentska Str, Rousse 7017, Bulgaria
来源：
2006 29TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY | 2006年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The investigation deals with problems of computer-aided design of wide-band antireflection coatings for semiconductor photo receiving devices (discrete photo receivers, IR CCD-cameras) based on HgCdTe sensitive material with optical windows from GaAs for the long wavelength infrared spectral region (8 mu m - 12 mu m). Wide-band antireflection multilayer structures from two different materials of high and low refractive index transparent in upper mentioned spectral region are designed and compared
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页码：181 / +
页数：2
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