Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs

被引：53

作者：

Stillman, W. ^{[1
]}

Shur, M. S.

Veksler, D.

Rumyantsev, S.

Guarin, F.

机构：

[1] Rensselaer Polytech Inst, Broadband Ctr, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, ECSE Dept, Troy, NY 12180 USA

[3] IBM Microelect, Hopewell Jct, NY 12533 USA

[4] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 07期

关键词：

D O I：

10.1049/el:20073475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of room temperature measurement of nonresonant sub-terahertz detection by nanoscale silicon MOSFETs under a variety of load conditions are reported. The effect of device loading is incorporated into existing response models to explain diminished response in the sub-threshold region, and calculation of noise equivalent power indicates minima near the threshold voltage.

引用

页码：422 / 423

页数：2

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