Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs

被引：53
作者：
Stillman, W. [1 ]
Shur, M. S.
Veksler, D.
Rumyantsev, S.
Guarin, F.
机构：
[1] Rensselaer Polytech Inst, Broadband Ctr, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, ECSE Dept, Troy, NY 12180 USA
[3] IBM Microelect, Hopewell Jct, NY 12533 USA
[4] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 07期
关键词：
D O I：
10.1049/el:20073475
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of room temperature measurement of nonresonant sub-terahertz detection by nanoscale silicon MOSFETs under a variety of load conditions are reported. The effect of device loading is incorporated into existing response models to explain diminished response in the sub-threshold region, and calculation of noise equivalent power indicates minima near the threshold voltage.
引用
收藏
页码：422 / 423
页数：2
相关论文
共 7 条
  • [1] SHALLOW-WATER ANALOGY FOR A BALLISTIC FIELD-EFFECT TRANSISTOR - NEW MECHANISM OF PLASMA-WAVE GENERATION BY DC CURRENT
    DYAKONOV, M
    SHUR, M
    [J]. PHYSICAL REVIEW LETTERS, 1993, 71 (15) : 2465 - 2468
  • [2] Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid
    Dyakonov, M
    Shur, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (03) : 380 - 387
  • [3] Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
    Knap, W
    Teppe, F
    Meziani, Y
    Dyakonova, N
    Lusakowski, J
    Boeuf, F
    Skotnicki, T
    Maude, D
    Rumyantsev, S
    Shur, MS
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (04) : 675 - 677
  • [4] Nonresonant detection of terahertz radiation in field effect transistors
    Knap, W
    Kachorovskii, V
    Deng, Y
    Rumyantsev, S
    Lü, JQ
    Gaska, R
    Shur, MS
    Simin, G
    Hu, X
    Khan, MA
    Saylor, CA
    Brunel, LC
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (11) : 9346 - 9353
  • [5] Nonresonant detection of terahertz radiation by silicon-on-insulator MUM
    Pala, N
    Teppe, E
    Veksler, D
    Deng, Y
    Shur, MS
    Gaska, R
    [J]. ELECTRONICS LETTERS, 2005, 41 (07) : 447 - 449
  • [6] Steegen A, 2005, INT EL DEVICES MEET, P69
  • [7] Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
    Teppe, F
    Knap, W
    Veksler, D
    Shur, MS
    Dmitriev, AP
    Kachorovskii, VY
    Rumyantsev, S
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (05)
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