Structural optical and electrical studies of AlGaN/GaN hetrostructures with AlN Inter layer grown on sapphire substrate by MOCVD

被引：2

作者：

Ramesh, Raju ^{[1
]}

Arivazhagan, Ponnusamy ^{[1
]}

Jayasakthi, Mathiyan ^{[1
]}

Loganthan, Ravi ^{[1
]}

Prabakaran, Kandhasamy ^{[1
]}

Kuppuligam, Boopathi ^{[1
]}

Balaji, Manavimaran ^{[1
]}

Baskar, Krishnan ^{[1
]}

机构：

[1] Anna Univ, Ctr Crystal Growth, Chennai 600025, Tamil Nadu, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES | 2014年

关键词：

AFM; MOCVD; AlGaN/GaN; heterostructures; AIN-1L; 2DEGs;

D O I：

10.1007/978-3-319-03002-9_29

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present study of AlGaN/GaN heterostructures with high quality AlN interlayer (AlN-IL) were grown by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrate. The AlN inter-layer thickness was varied as mm, 2nm and 3 nm. The High-resolution X-ray diffraction (HRXRD) FWHM for (002) plane of GaN was measured for AlGaN/GaN with different AlN-IL thickness. The surface roughness was measured using Atomic Force Microscope (AFM). The Photoluminescence (PL) band edge emission, the room temperature and low temperature hall measurement show the enhancement of two-dimensional electron gas (2DEG5) sheet carrier density due to AlN-IL. The results have been discussed in detail.

引用

页码：119 / 120

页数：2

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