Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations

被引：6
作者：
Okajima, K
Takeda, K
Oyama, N
Ohta, E
Shiraishi, K
Ohno, T
机构：
[1] Waseda Univ, Dept Mat Sci & Engn, Shinjyuku Ku, Tokyo 1698555, Japan
[2] Keio Univ, Dept Appl Phys & Physicoinformat, Kouhoku Ku, Yokohama, Kanagawa 2238522, Japan
[3] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[4] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 9AB期
关键词：
SK islands; misfit dislocation; phenomenological theory; growth mode; lattice-mismatched heteroepitaxy;
D O I：
10.1143/JJAP.39.L917
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in hereroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.
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页码：L917 / L920
页数：4
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