The structure, ferroelectric and dielectric properties of Na0.5Bi0.5(Ti0.98Mn0.02)O3 thin film prepared by chemical solution decomposition

被引：2
作者：
Han, Y. J. [1 ]
Yang, C. H. [1 ,2 ]
Yao, Y. Y. [1 ]
Qian, J. [1 ]
Hu, X. Q. [1 ]
Li, S. X. [1 ]
Jiao, F. Y. [1 ]
Du, X. B. [1 ]
机构：
[1] Univ Jinan, Sch Mat Sci & Engn, 336 West Rd Nan Xinzhuang, Jinan 250022, Peoples R China
[2] Univ Jinan, Shandong Prov Key Lab Preparat & Measurement Bldg, Jinan 250022, Peoples R China
来源：
MATERIALS TECHNOLOGY | 2015年 / 30卷 / A4期
基金：
中国国家自然科学基金;
关键词：
Na0.5Bi0.5TiO3; Thin film; Mn-doping; Crystalline; Ferroelectricity; Dielectricity; ELECTRICAL CHARACTERIZATION; PIEZOELECTRIC PROPERTIES; CRYSTALLIZATION; MICROSTRUCTURE; ELECTRODES; DEPOSITION;
D O I：
10.1080/10667857.2015.1123927
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Na0.5Bi0.5(Ti0.98Mn0.02)O-3 (NBTMn) thin film was fabricated on fluorine-doped tin oxide (FTO)/glass substrate via a chemical solution decomposition method. The microstructure and electrical performances of NBTMn thin film were investigated. The XRD pattern reveals that the NBTMn thin film is crystallised into a phase-pure polycrystalline perovskite structure. Also the film possesses a homogeneous structure. Enhanced ferroelectricity is obtained with a large remnant polarisation (P-r) of 19.8 mu C/cm(2) reflected by polarisation-electric field (P-E) hysteresis loop, which is consistent with the typical butterfly-shaped capacitance-voltage (C-V) curve. At the optimum applied voltage of +/- 22 V, a maximum value of 27% for dielectric tunability is obtained. Additionally, the NBTMn thin film shows a dielectric constant of 422, dissipation factor of 0.06 and figure of merit of 4.5 at 100 kHz.
引用
收藏
页码：172 / 175
页数：4
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