Triple quantum dot charging rectifier

被引：123

作者：

Vidan, A ^{[1
]}

Westervelt, RM

Stopa, M

Hanson, M

Gossard, AC

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[3] NTT Corp, Tarucha Mesoscop Correlat Project, ERATO JST, Atsugi Res & Dev Labs, Atsugi, Kanagawa, Japan

[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 16期

关键词：

D O I：

10.1063/1.1807030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Three tunnel-coupled quantum dots in the Coulomb blockade regime act as a molecular rectifier. We have realized this device in a GaAs/Al(0.3)Ga(0.7)As heterostructure containing a two-dimensional electron gas using lithographically patterned gates. The current through two tunnel-coupled dots in series is recorded versus applied voltage. Ratchet behavior is created by a third dot, with one lead, tunnel-coupled to one of the two dots. An electron enters the third dot where it is trapped, producing a jamming effect where no other electron may enter the device. The current-voltage characteristics show rectification and negative resistance arising from charging of the third dot. (C) 2004 American Institute of Physics.

引用

页码：3602 / 3604

页数：3

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