Active multi-mode-interferometer semiconductor optical amplifier

被引：13

作者：

Hamamoto, K

Gini, E

Holtmann, C

Melchior, H

Sudo, S

Mori, K

Sasaki, T

Yamaguchi, M

机构：

[1] NEC Corp Ltd, Syst Devices & Fundamental Res, Tsukuba, Ibaraki 3058501, Japan

[2] Swiss Fed Inst Technol, Inst Quantum Elect Micro & Optoelect, CH-8093 Zurich, Switzerland

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 14期

关键词：

Interferometers - Semiconducting indium gallium arsenide - Semiconducting indium phosphide - Spontaneous emission;

D O I：

10.1049/el:20000884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of semiconductor optical amplifier (SOA), consisting of a singlemode waveguide with a 1 x 1 multimode-interferometer (MMI) section, is proposed and experimental results presented. Maintaining single lobed outputs, these new MMI amplifiers show improvements of 2dB in gain and 5dB in saturation output compared to regular single-stripe SOAs.

引用

页码：1218 / 1220

页数：3

共 4 条

[1] A NEW STRUCTURE FOR HIGH-POWER TW-SLA [J].