Millionfold Resistance Change in Ferroelectric Tunnel Junctions Based on Nickelate Electrodes

被引:37
作者
Bruno, Flavio Y. [1 ,4 ]
Boyn, Soeren [1 ]
Fusil, Stephane [1 ]
Girod, Stephanie [1 ,5 ]
Carretero, Cecile [1 ]
Marinova, Maya [2 ,6 ]
Gloter, Alexandre [2 ]
Xavier, Stephane [3 ]
Deranlot, Cyrile [1 ]
Bibes, Manuel [1 ]
Barthelemy, Agnes [1 ]
Garcia, Vincent [1 ]
机构
[1] Univ Paris Saclay, Univ Paris 11, CNRS, Unite Mixte Phys,Thales, F-91767 Palaiseau, France
[2] Univ Paris 11, CNRS, UMR 8502, Lab Phys Solides, Batiment 510, F-91405 Orsay, France
[3] Thales Res & Technol, 1 Av Augustin Fresnel,Campus Polytech, F-91767 Palaiseau, France
[4] Dept Quantum Matter Phys, 24 Quai Ernest Ansermet, CH-1211 Geneva 4, Switzerland
[5] LIST, Mat Res & Technol Dept, 41 Rue Brill, L-4422 Belvaux, Luxembourg
[6] Univ Lille 1, CNRS, UMR8207, Unite Mat & Transformat, F-59655 Villeneuve Dascq, France
来源
ADVANCED ELECTRONIC MATERIALS | 2016年 / 2卷 / 03期
基金
欧洲研究理事会;
关键词
GIANT ELECTRORESISTANCE; POLARIZATION; TRANSITION;
D O I
10.1002/aelm.201500245
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
When electrons tunnel through an ultrathin ferroelectric, large variations of the tunnel transmission can result from the switching of the ferroelectric polarization. High-quality ultrathin films of BiFeO3 with atomically flat terraces and single unit-cell steps on epitaxial electrodes of LaNiO3 have been fabricated. The films crystallize in the pure polymorph of BiFeO3 with giant tetragonality; they show tunnel transport characteristics up to ten unit cells and a clear ferroelectric signal from scanning probe techniques. Sub-micrometer solid-state tunnel junctions defined from these heterostructures are switched by nanosecond voltage pulses. A complete reversal of the ferroelectric polarization results in large variations of the junction resistance, but partial switching of the polarization favors the reversibility of the resistance switching. Finally, the electrical transport characteristics of fully patterned tunnel junctions are investigated in the 300 K-80 K temperature range. Owing to the low resistivity of LaNiO3 electrodes, the junctions display record tunnel electroresistance values of more than 10(6) at 80 K combined with weak temperature dependences as expected for electron tunneling transport. These results will motivate further work to trigger metal-insulator transitions by electric-field effects in ferroelectric tunnel junctions combined with strongly correlated nickelates.
引用
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页数:7
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