Nitride Heterostructures and High-Electron-Mobility Transistors on Composite Silicon-Polycrystalline Diamond Substrates

被引：1

作者：

Chernykh, M. Y. ^{[1
]}

Ezubchenko, I. S. ^{[1
]}

Mayboroda, I. O. ^{[1
]}

Chernykh, I. A. ^{[1
]}

Kolobkova, E. M. ^{[1
]}

Perminov, P. A. ^{[1
]}

Sedov, V. S. ^{[2
]}

Altakhov, A. S. ^{[2
]}

Andreev, A. A. ^{[1
]}

Grishchenko, J., V ^{[1
]}

Martyanov, A. K. ^{[2
]}

Konov, V., I ^{[2
]}

Zanaveskin, M. L. ^{[1
]}

机构：

[1] Natl Res Ctr, Kurchatov Inst, Moscow, Russia

[2] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow, Russia

来源：

NANOTECHNOLOGIES IN RUSSIA | 2020年 / 15卷 / 11-12期

关键词：

PERFORMANCE;

D O I：

10.1134/S1995078020060075

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new type of substrates for the growth of nitride heterostructures is presented that consists of a 125-nm thick silicon layer and 290-mu m thick polycrystalline diamond. The possibility of epitaxial growth of nitride heterostructures on silicon-polycrystalline diamond substrates with characteristics at the level of heterostructures on silicon substrates is shown. The test transistors demonstrated the following: saturation current density of more than 1 A/mm and breakdown voltage of more than 90 V. The achieved results open up opportunities for the emergence of a new class of silicon-polycrystalline diamond substrates and the creation of powerful gallium nitride transistors with previously unattainable characteristics.

引用

收藏

页码：793 / 796

页数：4

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