Microscopic Real-Space Resistance Mapping Across CdTe Solar Cell Junctions by Scanning Spreading Resistance Microscopy

被引：7

作者：

Li, Huan ^{[1
,2
]}

Jiang, Chun-Sheng ^{[1
]}

Metzger, Wyatt K. ^{[1
]}

Shih, Chih-Kang ^{[2
]}

Al-Jassim, Mowafak ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 01期

关键词：

CdTe; microelectrical property; solar cell junction; scanning spreading resistance microscopy (SRRM); Thin-film PV; DIFFUSION; SULFUR;

D O I：

10.1109/JPHOTOV.2014.2363569

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report on scanning spreading resistance microscopy on cross sections of thin-film CdTe devices. The results show the capability of identifying the multiple layers, the depletion region, and the nonuniform doping. We observe carrier injection and depletion region movement by laser illumination or by electrically biasing the device, directly revealing the underlying physics of the solar cell junction in real space with resolutions of nanometer scale.

引用

页码：395 / 400

页数：6

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