Preparation and characterization of Mn-doped ZnO thin films

被引:0
作者
Rusu, G. G. [1 ]
Gorley, P. [2 ]
Baban, C. [1 ]
Rambu, A. P. [1 ]
Rusu, M. [1 ]
机构
[1] Alexandru Ioan Cuza Univ, Fac Phys, RO-700506 Iasi, Romania
[2] Yuri Fedkovych Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine
来源
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2010年 / 12卷 / 04期
关键词
Doped zinc Oxide; Thin films; X-ray diffraction; Optical properties; Electrical properties; OPTICAL-PROPERTIES; MAGNETIC-PROPERTIES; SOL-GEL; OXIDATION; FERROMAGNETISM; TEMPERATURE; ZINC;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Mn doped ZnO thin films (5.9 wt. %) (d = 140 - 300 nm) were prepared by thermal oxidation in ambient conditions, at 775 K, of the multilayered Zn/Mn thin stacks deposited in vacuum onto glass substrates by a modified version of two source evaporation technique. The XRD investigations revealed that the as doped ZnO films present a polycrystalline wurtzite structure with the predominant orientation of plane (002) parallel to the substrate surface. In respect of non-doped ZnO thin films, those Mn doped present a lower optical transmittance and an increase of the optical band gap. The temperature dependence of electrical conductivity (of about 1.6x10(-6) Omega(-1).cm(-1) at room temperature) of heat treated Mn doped ZnO films presents semiconducting characteristics.
引用
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页码:895 / 899
页数:5
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