Preparation and characterization of Mn-doped ZnO thin films

被引：0

作者：

Rusu, G. G. ^{[1
]}

Gorley, P. ^{[2
]}

Baban, C. ^{[1
]}

Rambu, A. P. ^{[1
]}

Rusu, M. ^{[1
]}

机构：

[1] Alexandru Ioan Cuza Univ, Fac Phys, RO-700506 Iasi, Romania

[2] Yuri Fedkovych Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2010年 / 12卷 / 04期

关键词：

Doped zinc Oxide; Thin films; X-ray diffraction; Optical properties; Electrical properties; OPTICAL-PROPERTIES; MAGNETIC-PROPERTIES; SOL-GEL; OXIDATION; FERROMAGNETISM; TEMPERATURE; ZINC;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Mn doped ZnO thin films (5.9 wt. %) (d = 140 - 300 nm) were prepared by thermal oxidation in ambient conditions, at 775 K, of the multilayered Zn/Mn thin stacks deposited in vacuum onto glass substrates by a modified version of two source evaporation technique. The XRD investigations revealed that the as doped ZnO films present a polycrystalline wurtzite structure with the predominant orientation of plane (002) parallel to the substrate surface. In respect of non-doped ZnO thin films, those Mn doped present a lower optical transmittance and an increase of the optical band gap. The temperature dependence of electrical conductivity (of about 1.6x10(-6) Omega(-1).cm(-1) at room temperature) of heat treated Mn doped ZnO films presents semiconducting characteristics.

引用

页码：895 / 899

页数：5

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