Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon

被引：18
作者：
Agarwal, S
Hoex, B
van de Sanden, MCM
Maroudas, D
Aydil, ES [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA
[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[3] Univ Massachusetts, Dept Chem Engn, Amherst, MA 01003 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 06期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1116/1.1824191
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hydrogen and deuterium in bond-centered (BC) and platelet-like configurations were detected in hydrogenated (and deuterated) amorphous silicon thin films deposited from SiH4 and SiD4. plasmas. Infrared absorptions due to these configurations were measured using in situ multiple total internal reflection Fourier transform infrared spectroscopy in a differential mode. where changes in the as-deposited a-Si: H(D) films were observed during D,(H,) plasma exposure. This method coupled with preferential replacement of H(D) by D(H) in BC and platelet-like configurations over the isolated bulk SiH(SiD) configurations enabled detection of these modes without interference from the strong SiH(SiD), absorptions. The Si-H(D) stretching modes for BC hydrogen and BC deuterium were observed at similar to1950 and similar to1420 cm(-1), respectively, while those for platelet-like, hydrogen and deuterium were detected at similar to 2033 and similar to 1480 cm(-1) respectively. (C) 2004 American Vacuum Society.
引用
收藏
页码：2719 / 2726
页数：8
相关论文
共 40 条
[1]   PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON - STUDIES OF THE GROWTH SURFACE [J].
ABELSON, JR .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (06) :493-512
[2]   Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces [J].
Agarwal, S ;
Sriraman, S ;
Takano, A ;
van de Sanden, MCM ;
Aydil, ES ;
Maroudas, D .
SURFACE SCIENCE, 2002, 515 (01) :L469-L474
[3]   Abstraction of atomic hydrogen by atomic deuterium from an amorphous hydrogenated silicon surface [J].
Agarwal, S ;
Takano, A ;
van de Sanden, MCM ;
Maroudas, D ;
Aydil, ES .
JOURNAL OF CHEMICAL PHYSICS, 2002, 117 (23) :10805-10816
[4]  
AYDIL ES, 2001, MAT RES SOC S P, V664
[5]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[6]   INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].
BURROWS, VA ;
CHABAL, YJ ;
HIGASHI, GS ;
RAGHAVACHARI, K ;
CHRISTMAN, SB .
APPLIED PHYSICS LETTERS, 1988, 53 (11) :998-1000
[7]  
Cabarrocas PRI, 1998, J NON-CRYST SOLIDS, V227, P871, DOI 10.1016/S0022-3093(98)00200-2
[8]   HYDROGEN CHEMISORPTION ON SI(111)-(7X7) AND SI(111)-(1X1) SURFACES - A COMPARATIVE INFRARED STUDY [J].
CHABAL, YJ ;
HIGASHI, GS ;
CHRISTMAN, SB .
PHYSICAL REVIEW B, 1983, 28 (08) :4472-4479
[9]   Etching, insertion, and abstraction reactions of atomic deuterium with amorphous silicon hydride films [J].
Chiang, CM ;
Gates, SM ;
Lee, SS ;
Kong, M ;
Bent, SF .
JOURNAL OF PHYSICAL CHEMISTRY B, 1997, 101 (46) :9537-9547
[10]   Structural study of initial layer for μc-Si:H growth using real time in situ spectroscopic ellipsometry and infrared spectroscopy [J].
Fujiwara, H ;
Toyoshima, Y ;
Kondo, M ;
Matsuda, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :38-42
1234