Structural and optical characterisation of Eu implanted AlxGa1-xN

被引：12
作者：
Lorenz, K.
Alves, E.
Monteiro, T.
Cruz, A.
Peres, M.
机构：
[1] Inst Tecnol & Nuc, P-2686953 Sacavem, Portugal
[2] Univ Lisbon, CFN, P-1649003 Lisbon, Portugal
[3] Univ Aveiro, Dept Fis & 13N, P-3810193 Aveiro, Portugal
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷
关键词：
aluminum gallium nitride; rare earth; implantation; Rutherford backscattering spectrometry; photoluminescence;
D O I：
10.1016/j.nimb.2007.01.020
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
AlxGa1-xN films grown on sapphire substrates with AlN contents from 0 to 100% were implanted with 8 x 10(14) at/cm(2) Eu ions. The structural properties and damage accumulation were studied by Rutherford backscattering and channelling spectrometry. The implantation damage decreases considerably for all samples containing Al with AlN showing the best radiation hardness. Despite a high damage level, the fraction of Eu incorporated in near-substitutional sites is highest for GaN. Photoluminescence spectra after annealing at 1100 degrees C show Eu related luminescence lines in the red spectral region for all samples. The PL intensity at room temperature increases strongly when the AlN content is increased from 0 to 30% and drops steeply for higher AlN contents. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：307 / 310
页数：4
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