Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

被引:11
作者
Chatterjee, Shouvik [1 ,2 ]
Khalid, Shoaib [3 ,4 ]
Inbar, Hadass S. [5 ]
Goswami, Aranya [1 ]
Guo, Taozhi [6 ]
Chang, Yu-Hao [5 ]
Young, Elliot [5 ]
Fedorov, Alexei, V [7 ]
Read, Dan [1 ,8 ]
Janotti, Anderson [3 ]
Palmstrom, Chris J. [1 ,5 ,9 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Homi Bhabha Rd, Mumbai 400005, Maharashtra, India
[3] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
[4] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
[5] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[6] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
[7] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[8] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3AA, Wales
[9] Univ Calif Santa Barbara, Calif NanoSyst Inst, Santa Barbara, CA 93106 USA
来源
SCIENCE ADVANCES | 2021年 / 7卷 / 16期
关键词
INITIO MOLECULAR-DYNAMICS; METAL; MOBILITY; GASB; HETEROSTRUCTURES; SYSTEMS; STATES; AU;
D O I
10.1126/sciadv.abe8971
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a twodimensional, interfacial hole gas. This is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultrathin limit. Our work lays out a general strategy of using confined thin-film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously provides insights into its origin.
引用
收藏
页数:9
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