Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High-k Gate Dielectrics

被引：257

作者：

Kanamura, Masahito ^{[1
]}

Ohki, Toshihiro ^{[1
]}

Kikkawa, Toshihide ^{[1
]}

Imanishi, Kenji ^{[1
]}

Imada, Tadahiro ^{[1
]}

Yamada, Atsushi ^{[1
]}

Hara, Naoki ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 03期

关键词：

ALD; enhancement mode; GaN; MIS high-electron-mobility transistor (MIS-HEMT); ALGAN/GAN HEMTS; TRANSISTOR; RESISTANCE;

D O I：

10.1109/LED.2009.2039026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices. Devices with an n-GaN/i-AlN/n-GaN triple cap layer, a recessed-gate structure, and high-k gate dielectrics show high drain current and complete enhancement-mode operation. The maximum drain current and threshold voltage (V-th) are 800 mA/mm and + 3 V, respectively. These results indicate that a recessed AlGaN/GaN MIS-HEMT with the triple cap could be a promising new technology for future device applications.

引用

页码：189 / 191

页数：3

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