Ferroelectric PZT thin films for photovoltaic application

被引：21
|
作者：
Gupta, Reema [1 ,3 ]
Gupta, Vinay [1 ]
Tomar, Monika [2 ]
机构：
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
[2] Univ Delhi, Phys Dept, Miranda House, Delhi 110007, India
[3] Univ Delhi, Hindu Coll, Phys Dept, Delhi 110007, India
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2020年 / 105卷 / 105期
关键词：
Lead zirconium titanate; Chemical deposition; Ferroelectric; Polarization; Photovolataics;
D O I：
10.1016/j.mssp.2019.104723
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ferroelectric photovoltaic response characteristics of Lead Zirconate Titanate (PZT) thin film in metal-ferroelectric-metal (MFM) configuration is studied under 33 mode upon exposure to UV radiations. PZT thin films of 180 nm are prepared on inter-digital electrodes patterned silicon substrate (with silicon dioxide as insulating layer) using chemical solution deposition (CSD) technique followed by rapid thermal annealing. PZT thin films are found to be in single phase and possess high electrical polarization (50 mu C/cm(2)). Significant increase in photocurrent and large value of open circuit voltage (1.0 V) is observed for the prepared ferroelectric photovoltaic film under UV illumination.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] Applications to photoconductor-ferroelectric memory of PZT thin films
    Adachi, M
    Wang, W
    Karaki, T
    PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 2001, : 71 - 74
  • [22] Effect of crystallographic texture on ferroelectric performance of PZT thin films
    Fox, GR
    FERROELECTRIC THIN FILMS VIII, 2000, 596 : 205 - 210
  • [23] Frequency spectra of fatigue of PZT and other ferroelectric thin films
    Du, XF
    Chen, IW
    FERROELECTRIC THIN FILMS VI, 1998, 493 : 311 - 316
  • [24] Effect of ferroelectric polarization on current response of PZT thin films
    Tagantsev, AK
    Kholkin, AL
    Colla, EL
    Brooks, KG
    Setter, N
    INTEGRATED FERROELECTRICS, 1995, 10 (1-4) : 189 - 204
  • [25] Mechanical and Ferroelectric Behavior of PZT-Based Thin Films
    Yagnamurthy, Sivakumar
    Chasiotis, Ioannis
    Lambros, John
    Polcawich, Ronald G.
    Pulskamp, Jeffrey S.
    Dubey, Madan
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2011, 20 (06) : 1250 - 1258
  • [26] Effects of PZT buffer layers on PZFNT ferroelectric thin films
    Peng, Jiagen
    Zhang, Shuren
    Zhong, Chaowei
    Sun, Mingxia
    Pang, Yue
    Zhang, Wanli
    INTEGRATED FERROELECTRICS, 2006, 80 (01) : 219 - 225
  • [27] Photoinduced modification of optical properties of ferroelectric PZT thin films
    Yousefi, Saeed
    Hua, Nelson
    Mehta, Jugal
    Li, Jianheng
    Guillemot, Loic
    Rippy, Geoffery
    Zhong, Louie
    Schaller, Richard D.
    Maroutian, Thomas
    Haldrup, Kristoffer
    Matzen, Sylvia
    Kukreja, Roopali
    MRS COMMUNICATIONS, 2024, 14 (01) : 17 - 25
  • [28] Bottom electrode crystallization of PZT thin films for ferroelectric capacitors
    Mardare, AI
    Mardare, CC
    Joanni, E
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2005, 25 (05) : 735 - 741
  • [29] Ferroelectric PZT thin films by sol-gel deposition
    Reaney, IM
    Taylor, DV
    Brooks, KG
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 1998, 13 (1-3) : 813 - 820
  • [30] Texture, structure and domain microstructure of ferroelectric PZT thin films
    Hector, J
    Floquet, N
    Niepce, C
    Gaucher, P
    Ganne, JP
    MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) : 285 - 288
12345