Ferroelectric PZT thin films for photovoltaic application

被引：21
|
作者：
Gupta, Reema [1 ,3 ]
Gupta, Vinay [1 ]
Tomar, Monika [2 ]
机构：
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
[2] Univ Delhi, Phys Dept, Miranda House, Delhi 110007, India
[3] Univ Delhi, Hindu Coll, Phys Dept, Delhi 110007, India
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2020年 / 105卷 / 105期
关键词：
Lead zirconium titanate; Chemical deposition; Ferroelectric; Polarization; Photovolataics;
D O I：
10.1016/j.mssp.2019.104723
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ferroelectric photovoltaic response characteristics of Lead Zirconate Titanate (PZT) thin film in metal-ferroelectric-metal (MFM) configuration is studied under 33 mode upon exposure to UV radiations. PZT thin films of 180 nm are prepared on inter-digital electrodes patterned silicon substrate (with silicon dioxide as insulating layer) using chemical solution deposition (CSD) technique followed by rapid thermal annealing. PZT thin films are found to be in single phase and possess high electrical polarization (50 mu C/cm(2)). Significant increase in photocurrent and large value of open circuit voltage (1.0 V) is observed for the prepared ferroelectric photovoltaic film under UV illumination.
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页数：4
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