Low power low noise high speed tunable CMOS radiation detection system

被引:1
|
作者
Galan, J. [1 ]
Sanchez-Raya, M. [1 ]
Lopez-Ahumada, R. [1 ]
Sanchez-Rodriguez, T. [1 ]
Martel, I. [2 ]
Jimenez, R. [1 ]
机构
[1] Univ Huelva, Dept Ingn Elect Sistemas Informat & Automat, Huelva, Spain
[2] Univ Huelva, Dept Fis Aplicada, Huelva, Spain
关键词
Readout front-end; Semiconductor detectors; Gain boosting; CMOS submicron technology; Noise optimization; FRONT-ENDS; CHARGE; PERFORMANCE;
D O I
10.1016/j.mejo.2013.11.018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a design of low power and low noise, high speed readout front-end system for semiconductor detectors. The architecture comprises a folded cascade charge sensitive amplifier with gain enhancement, a pole-zero cancellation circuit and a complex shaper circuit with Gm-C topology. A local feedback amplifier based on a wide swing gain boosting scheme with dc level shifting has been used. The system has been fabricated in a 0.13-mu m CMOS technology with a single 1.2-V supply voltage. Experimental results show the flexibility of the system where the key parameters, such as decay time, charge gain and peaking time can be tuned. For a nominal peaking time of 150 ns the power consumption of the entire channel is less than 5 mW. A power consumption-low noise tradeoff will be considered to match a detector capacitance of 5 pF. The output pulse has a peak amplitude of 200 mV for a charge of 10 fC from the detector and achieves a linearity better than 1% up to an input charge range of 12 fC. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1319 / 1326
页数:8
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