Linear Analysis of High-Frequency Field-Effect Transistors Using the CN-FDTD Method (vol 65, pg 1946, 2017)

被引：0

作者：

Honarbakhsh, Babak ^{[1
]}

机构：

[1] Shahid Beheshti Univ, Elect Engn Dept, Tehran 1983969411, Iran

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2018年 / 66卷 / 09期

关键词：

D O I：

10.1109/TMTT.2018.2847681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4090 / 4090

页数：1

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