Semiconducting graphene nanostrips with edge disorder

被引:160
作者
Gunlycke, D. [1 ]
Areshkin, D. A.
White, C. T.
机构
[1] USN, Res Lab, Washington, DC 20375 USA
[2] George Washington Univ, Washington, DC 20052 USA
关键词
CARBON NANOTUBES; TRANSPORT; STATE;
D O I
10.1063/1.2718515
中图分类号
O59 [应用物理学];
学科分类号
摘要
Results of calculations are presented which show that edge disorder can easily transform semiconducting graphene nanostrips into Anderson insulators. However, it is also shown that this problem could be overcome by adjusting the nanostrip aspect ratio to decrease the effects of the edge disorder without making the nanostrip so wide as to close the semiconducting band gap or so short as to allow tunneling through the band gap. (c) 2007 American Institute of Physics.
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页数:3
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