Effect of fluorine contamination on barrier metal oxidation

被引：3

作者：

Ozaki, S. ^{[1
]}

Nakata, Y. ^{[1
]}

Kobayashi, Y. ^{[1
]}

Nakamura, T. ^{[1
]}

Iba, Y. ^{[2
]}

Fukuyama, S. ^{[2
]}

Watatani, H. ^{[2
]}

Ohkura, Y. ^{[2
]}

机构：

[1] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

[2] Fujitsu Microelect Ltd, Kuwana, Mie 5110192, Japan

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 03期

关键词：

Barrier metal; Oxidation; Interfacial; Fluorine contamination; Porous; Low-k; Etching; INDUCED DAMAGE; FILMS; ETCH;

D O I：

10.1016/j.mee.2009.06.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We clarified that interfacial barrier metal oxidation with inter layer dielectric (ILD) could be revealed by X-ray photoelectron spectroscopy (XPS) on the peeled-side of the barrier metal, and the barrier metal oxidation was promoted by fluorine contamination which adsorb to the ILD surface during etching. To consider the effect of fluorine contamination on barrier metal oxidation, hydrolysable property of fluorine contamination was evaluated by measuring the change of F is spectrum after dipping in boiling water. Moreover, fluoride ions and the acidity of water in which fluorine contamination was dipped were measured by Ion chromatography and pH measurement, respectively. According to our experiments, it was suggested that hydrofluoric acid (HF) acted as an oxidizing catalyst to promote barrier metal oxidation at the interface of barrier metal and ILD. (C) 2009 Elsevier B.V. All rights reserved.

引用

收藏

页码：370 / 372

页数：3

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