Conical surrounding gate MOSFET: a possibility in gate-all-around family

被引：13

作者：

Jena, B. ^{[1
]}

Ramkrishna, B. S. ^{[1
]}

Dash, S. ^{[2
]}

Mishra, G. P. ^{[1
]}

机构：

[1] Siksha O Anusandhan Univ, Inst Tech Educ & Res, Dept Elect & Instrumentat Engn, Device Simulat Lab, Bhubaneswar 751030, Orissa, India

[2] Siksha O Anusandhan Univ, Dept Elect & Commun Engn, Inst Tech Educ & Res, Bhubaneswar 751030, Orissa, India

来源：

ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 7卷 / 01期

关键词：

conical surrounding gate; tapering ratio; drain current; threshold voltage; subthreshold swing; CYLINDRICAL GATE; MODEL; FIELD;

D O I：

10.1088/2043-6262/7/1/015009

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper a new conical surrounding gate metal-oxide-semiconductor field effect transistor (MOSFET) with triple-material gate has been proposed and verified using TCAD device simulator from Synopsis. The electrostatic performance of conical model with different tapering ratios is extensively investigated and compared with that of cylindrical model (tapering ratio TR = 1). The present model exhibits improved electrostatic behavior for an optimized tapering ratio of 0.98 as compared to the conventional cylindrical model. The results reveal that the triple-material conical model provides better ON current performance, transconductance and reduced threshold voltage. On the contrary the single-material conical model exhibits maximum I-ON/I-OFF ratio, minimum OFF current and reduced subthreshold swing (SS) in comparison to other models. Thus, the conical model with optimized tapering ratio can be a possible replacement of cylindrical model for low-power and high speed application.

引用

页数：6

共 25 条

[1]

[Anonymous], 2014, SENT DEV US GUID

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