Parabolic-confocal unstable-resonator semiconductor lasers - Modeling and experiments

被引:24
作者
Eriksson, N [1 ]
Larsson, A
Uemukai, M
Suhara, T
机构
[1] Chalmers Univ Technol, Dept Optoelect & Elect Measurements, SE-41296 Goteborg, Sweden
[2] Osaka Univ, Fac Engn, Dept Elect, Suita, Osaka 565, Japan
基金
瑞典研究理事会;
关键词
distributed Bragg reflector lasers; laser resonators; optical propagation in nonlinear media; semiconductor lasers; surface-emitting lasers;
D O I
10.1109/3.668774
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Surface-emitting all-grating-based resonator lasers, suitable for integration with diffractive beam-forming elements, have been experimentally theoretically studied. The lasers exhibit single spatial mode operation for a device width of 160 mu m. The device performance is modeled using a beam propagation method, which accounts for spatial hole burning as well as thermal and carrier diffusion effects. Near- and far-field calculations are incorporated to facilitate the comparison with the experimental results, To achieve high-quality beam forming, it is essential that wavefront of the guided optical mode is well defined stable. Using the model, we study the dependence of the wavefront distortion on various parameters and show how these distortions affect the far-field characteristics. The results from the simulations agree well with the experimental work. We find that the laser performance is to a large extent controlled by thermal effects. At low-power operation, these effects can he compensated for, for a range of the injection current, by modifications of the resonator or outcoupler grating geometries.
引用
收藏
页码:858 / 868
页数:11
相关论文
共 34 条
  • [2] DESIGN CONSIDERATIONS FAR HIGH-POWER GAINP/ALGAINP UNSTABLE-RESONATOR SEMICONDUCTOR-LASERS
    BAO, ZY
    DEFREEZ, RK
    CARLESON, PD
    FELISKY, MK
    LARGENT, C
    SERREZE, HB
    [J]. APPLIED OPTICS, 1993, 32 (36): : 7402 - 7407
  • [3] Reactive-ion-etched diffraction-limited unstable resonator semiconductor lasers
    Biellak, SA
    Fanning, G
    Sun, Y
    Wong, SS
    Siegman, AE
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (02) : 219 - 230
  • [4] Bogatov A. P., 1980, Soviet Journal of Quantum Electronics, V10, P620, DOI 10.1070/QE1980v010n05ABEH010170
  • [5] Gain, refractive index, and alpha-parameter in InGaAs-GaAs SQW broad-area lasers
    Bossert, DJ
    Gallant, D
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (03) : 322 - 324
  • [6] Botez D., 1994, DIODE LASER ARRAYS
  • [7] CARLSON NW, 1994, MONOLITHIC DIODE LAS
  • [8] Coldren L. A., 2012, DIODE LASERS PHOTONI, V218
  • [9] ETCHED-MIRROR UNSTABLE-RESONATOR SEMICONDUCTOR-LASERS
    CRAIG, RR
    CASPERSON, LW
    STAFSUDD, OM
    YANG, JJJ
    EVANS, GA
    DAVIDHEISER, RA
    [J]. ELECTRONICS LETTERS, 1985, 21 (02) : 62 - 63
  • [10] DENTE GC, 1995, P SOC PHOTO-OPT INS, V2382, P165, DOI 10.1117/12.208445