Investigation for (100)-/(001)-Oriented Pb(Zr,Ti)O3 Films Using Platinum Nanofacets and PbTiO3 Seeding Layer

被引：2
|
作者：
Matsuo, Hirokazu [1 ]
Kawai, Yusuke [2 ]
Tanaka, Shuji [2 ]
Esashi, Masayoshi [3 ]
机构：
[1] Nippon Signal Co Ltd, Ctr Res & Dev, Kuki, Saitama 3468524, Japan
[2] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
[3] Tohoku Univ, World Premier Int Res Ctr Initiat Atom Mol Mat, Sendai, Miyagi 9808579, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 06期
关键词：
PT/TI ELECTRODE STACK; RANDOM-ACCESS MEMORY; THIN-FILMS; HILLOCK GROWTH; ORIENTATION; TI;
D O I：
10.1143/JJAP.49.061503
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The (100)-/(001)-oriented Pb(Zr,Ti)O-3 films using Pt nanofacets and PbTiO3 seeding layer were invesigated. The Ti/Pt electrodes were deposited using a sputtering system. Pb(Zr, Ti) O-3 and PbTiO3 seeding layer were deposited using a semi-homemade metal organic chemical vapor deposition (MOCVD) apparatus. The Pt nanofacets on hillocks caused by Ti diffusion and compressive stress can be prepared by preannealing of the electrode on the substrate. The most highly (100)-/(001)-oriented Pb(Zr, Ti) O-3 films were obtained with the same thickness deposition of the PbTiO3 seeding layer as the half value of maximum roughness (Rz) of the Pt surface, which is approximately 3.5-4.0 nm. A simple (100)/(001) orientation method was developed without any special oxide metal electrodes or single-crystal substrates for orientation using commonly unpreferable hillocks, which cause the problems. This simple method is suitable for commercial applications in the future. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.061503
引用
收藏
页码：0615031 / 0615034
页数：4
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