Studies of aluminium nitride ceramics for application in UV dosimetry

被引:20
作者
Trinkler, L
Botter-Jensen, L
Christensen, P
Berzina, B
机构
[1] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia
[2] Riso Natl Lab, DK-4000 Roskilde, Denmark
关键词
D O I
10.1093/oxfordjournals.rpd.a033296
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
The study is reported of the ceramic material AlN-Y2O3 as a potential luminescence dosemeter for the detection of UV radiation. Both the thermoluminescence and the optically stimulated luminescence properties of the material have been studied after exposure to UV radiation and compared with those of the widely used dosemeter material Al2O3:C. It has been shown that AlN-Y2O3 ceramics exhibit three orders of magnitude higher sensitivity to UV radiation than does Al2O3,:C over a broad spectral region. The thermoluminescence from AlN-Y2O3 is characterised by linear dose dependence over a wide range. The fading characteristics of the UV-induced thermoluminescence and optically stimulated luminescence signals with storage time at room temperature were found to be a drawback, but still lower than those induced after exposure to ionising radiation.
引用
收藏
页码:299 / 306
页数:8
相关论文
共 24 条
[1]  
Agullo-Lopez F., 1988, POINT DEFECTS MAT
[2]  
AKSELROD MS, 1990, RADIAT PROT DOSIM, V32, P15
[3]  
Botter-Jensen L, 1999, RADIAT PROT DOSIM, V84, P537, DOI 10.1093/oxfordjournals.rpd.a032793
[4]  
Botter-Jensen L, 1999, RADIAT PROT DOSIM, V84, P335, DOI 10.1093/oxfordjournals.rpd.a032750
[5]   Al2O3:C as a sensitive OSL dosemeter for rapid assessment of environmental photon dose rates [J].
BotterJensen, L ;
Larsen, NA ;
Markey, BG ;
McKeever, SWS .
RADIATION MEASUREMENTS, 1997, 27 (02) :295-298
[6]  
BOTTERJENSEN L, 2000, IN PRESS RAD MEAS
[7]   An integrating UVB dosemeter system [J].
Colyott, LE ;
McKeever, SWS ;
Akselrod, MS .
RADIATION PROTECTION DOSIMETRY, 1999, 85 (1-4) :309-312
[8]   An integrating ultraviolet-B dosemeter using phototransferred thermoluminescence from alpha-Al2O3:C [J].
Colyott, LE ;
Akselrod, MS ;
McKeever, SWS .
RADIATION PROTECTION DOSIMETRY, 1997, 72 (02) :87-94
[10]   Piezoelectric, dielectric, and interfacial properties of aluminum nitride films [J].
Liufu, D ;
Kao, KC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04) :2360-2366