Tunable dual-mode filter using varactor and variable ring resonator on integrated BST/TiO2/Si substrate

被引:9
作者
Kim, K. B. [1 ]
机构
[1] Samsung Thales Co, SIAT, Yongin 449885, Gyeonggi Do, South Korea
关键词
BST-VARACTOR;
D O I
10.1049/el.2010.0501
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A RF tunable dual-mode filter employing a BST (BaxSr1-xTiO3)-based ring resonator and a capacitor is proposed. BST thin film was deposited on TiO2/Si substrate and a TiO2 buffer layer grown by ALD (atomic layer deposition). The device with a BST varactor capacitance of 0.5 pF and 40% of tunability applied voltage of 40 V, and a tunable ring resonator frequency of 1.53-2.02 GHz with a bias of up to 40 V, has been realised. The fabricated bandpass filter has a centre frequency of 1.53 GHz and shows a tunability of approximately 20% with an applied voltage of 40 V. It also has a bandwidth of 74 MHz and shows a tunability of approximately 27% with an applied voltage of 40 V.
引用
收藏
页码:510 / U63
页数:2
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