Robust Ballistic Transport in Narrow Armchair-Edge Graphene Nanoribbons with Chemical Edge Disorder

被引：7

作者：

Gunlycke, Daniel ^{[1
]}

Mintmire, John W. ^{[2
]}

White, Carter T. ^{[1
]}

机构：

[1] USN, Res Lab, Div Chem, Washington, DC 20375 USA

[2] Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2010年 / 1卷 / 07期

关键词：

CARBON NANOTUBES; DENSITY; WIRES;

D O I：

10.1021/jz100046q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A semiempirical model based on density functional results is used to study the effects of chemical edge disorder on the transport properties of armchair-edge graphene nanoribbons. Despite a strong scattering potential induced by substituting randomly F for H atoms along their edges, carriers injected close to the band gap in ribbons as narrow as 4.8 nm exhibit ballistic transport over hundreds of nanometers. The results indicate that robust ballistic transport can be maintained in the presence of chemical edge disorder so long as the terminating atoms and/or functional groups remain one-fold-coordinated to the edges and do not contribute states to the pi-network within several eV of the gap.

引用

页码：1082 / 1085

页数：4

共 30 条

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