Epitaxial growth of SrF2 on ZnSe(100) epitaxial films

被引：0

作者：

Sarinanto, MM ^{[1
]}

Tsutsui, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Technol, Dept Appl Elect, Midori Ku, Yokohama, Kanagawa 226, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 01期

关键词：

heteroepitaxy of dissimilar material; ZnSe; SrF2; ionicity; MBE; epitaxial temperature;

D O I：

10.1143/JJAP.37.253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial SrF2 films were grown on ZnSe(100) epitaxial substrates using molecular beam epitaxy (MBE), and their crystallinity dependent on growth temperature was characterized using X-ray diffraction and Rutherford backscattering spectroscopy. SrF2 film with good crystallinity was obtained at the growth temperature of 250 degrees C.

引用

页码：253 / 254

页数：2

共 6 条

[1]

ASANO T, 1983, JPN J APPL PHYS, V22, P1476

[2]

PHILLIPS JC, 1973, BONDS BANDS SEMICOND, P42

[3] RUTHERFORD BACKSCATTERING CHANNELING AND TRANSMISSION ELECTRON-MICROSCOPY ANALYSIS OF EPITAXIAL BAF2 FILMS ON GE AND INP [J].