Morphology and microstructure of the Ar+-ion sputtered (0001) α-Al2O3 surface

被引：21

作者：

Akatsu, T ^{[1
]}

Scheu, C

Wagner, T

Gemming, T

Hosoda, N

Suga, T

Rühle, M

机构：

[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

[2] Univ Tokyo, Res Ctr Adv Sci Technol, Tokyo, Japan

[3] Max Planck Inst Met Res, Stuttgart, Germany

来源：

APPLIED SURFACE SCIENCE | 2000年 / 165卷 / 2-3期

关键词：

gamma-Al2O3; high-resolution transmission electron microscopy; analytical electron microscopy;

D O I：

10.1016/S0169-4332(00)00376-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The morphology and microstructure of Ar+-ion bombarded (0001) alpha-Al2O3 surfaces were studied by employing analytical electron microscopy (AEM) and high-resolution transmission electron microscopy (HRTEM). Surface bombardment with 1 keV Ar+-ions resulted in the formation of a ca. 3-nm thick gamma-Al2O3 layer with a high density of structural defects. A well-defined epitaxial orientation relationship between the gamma-Al2O3 layer and the substrate was observed: (0001)(alpha) parallel to (111)(gamma), [<10(1)over bar 0>], parallel to [110](gamma), and [<11(2)over bar 0>](alpha) parallel to +/-[<11(2)over bar >](gamma). (C) 2000 Published by Elsevier Science B.V.

引用

页码：159 / 165

页数：7

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