Introduction of Li into Ag-Based Noncentrosymmetric Sulfides for High-Performance Infrared Nonlinear Optical Materials

被引:32
作者
Zhou, Wenfeng [1 ]
Yao, Wen-Dong [1 ]
Zhang, Qing [1 ]
Xue, Huaiguo [1 ]
Guo, Sheng-Ping [1 ]
机构
[1] Yangzhou Univ, Sch Chem & Chem Engn, Yangzhou 225002, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
BAND-GAP; GE; SI; SE; CHALCOGENIDE; CRYSTALS; SN;
D O I
10.1021/acs.inorgchem.1c00205
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The understanding of the structure-performance relationship is beneficial to establish the balance between the second-harmonic generation (SHG) response and laser-induced damage threshold (LIDT) in exploring novel nonlinear optical (NLO) materials. In this work, a facile strategy of partial Li co-occupation with Ag is employed to investigate the structures and NLO performances of the four Ag-based noncentrosymmetric chalcogenides Ag2In2SiS6 (1), (Li0.79Ag1.21)In2SiS6 (2), (Li1.12Ag0.88)In2SiS6 (3), and (Li1.44Ag0.56)In2SiS6 (4). Both the SHG intensity and LIDT are improved as the Li element is introduced, among which 4 exhibits the optimal phase-matchable SHG response of similar to 0.8 x AgGaS2 (AGS) and a high LIDT of 4 x AGS. These NLO activities are explained by theoretical calculation and the dipole moment analysis.
引用
收藏
页码:5198 / 5205
页数:8
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