Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates

被引：11

作者：

Bergamaschini, Roberto ^{[1
,2
]}

Salvalaglio, Marco ^{[1
,2
]}

Scaccabarozzi, Andrea ^{[1
,2
]}

Isa, Fabio ^{[3
]}

Falub, Claudiu V. ^{[3
]}

Isella, Giovanni ^{[4
,5
]}

von Kaenel, Hans ^{[3
]}

Montalenti, Francesco ^{[1
,2
]}

Miglio, Leo ^{[1
,2
]}

机构：

[1] Univ Milano Bicocca, L NESS, Via R Cozzi 55, I-20126 Milan, Italy

[2] Univ Milano Bicocca, Dept Mat Sci, Via R Cozzi 55, I-20126 Milan, Italy

[3] ETH, Solid State Phys Lab, Otto Stem Weg 1, CH-8093 Zurich, Switzerland

[4] Politecn Milan, L NESS, Via F Anzani 42, I-22100 Como, Italy

[5] Politecn Milan, Dept Phys, Via F Anzani 42, I-22100 Como, Italy

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 440卷

基金：

瑞士国家科学基金会;

关键词：

Growth models; Chemical vapor deposition processes; Semiconducting germanium; Semiconducting silicon; PENDEO-EPITAXIAL GROWTH; GALLIUM NITRIDE; THIN-FILMS; LAYERS; EVOLUTION; HETEROEPITAXY; INTEGRATION; MODEL;

D O I：

10.1016/j.jcrysgro.2016.01.035

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A method for growing suspended Ge films on micron -sized Si pillars in Si(001) is discussed. In [C.V. Falub et al., Science 335 (2012) 1330] vertically aligned three-dimensional Ge crystals, separated by a few tens of nanometers, were obtained by depositing several micrometers of Ge using Low-Energy Plasma-Enhanced Chemical Vapor Deposition. Here a different regime of high growth temperature is exploited in order to induce the merging of the crystals into a connected structure eventually forming a continuous, two-dimensional film. The mechanisms leading to such a behavior are discussed with the aid of an effective model of crystal growth. Both the effects of deposition and curvature-driven surface diffusion are considered to reproduce the main features of coalescence. The key enabling role of high temperature is identified with the activation of the diffusion process on a time scale competitive with the deposition rate. We demonstrate the versatility of the deposition process, which allows to switch between the formation of individual crystals and a continuous suspended film simply by tuning the growth temperature. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：86 / 95

页数：10

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