Influence of pH solution on photoluminescence of porous silicon

被引：32
作者：
Benilov, A.
Gavrilchenko, I.
Benilova, I.
Skryshevsky, V.
Cabrera, M.
机构：
[1] Ecole Cent Lyon, Lab Elect Optoelect & Microsyst, F-69131 Ecully, France
[2] Kyiv Natl Taras Shevchenko Univ, Radiophys Dept, UA-01033 Kiev, Ukraine
[3] NAS Ukraine, Inst Mol Biol & Genet, UA-03143 Kiev, Ukraine
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2007年 / 137卷 / 02期
关键词：
porous silicon; photoluminescence; pH sensor;
D O I：
10.1016/j.sna.2007.02.032
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The radiative lifetime of as-prepared and modified layers of porous silicon (por-Si) were studied in liquid solutions with different pH. It was observed that por-Si photoluminescence (PL) intensity and decay lifetime strongly depend on pH value. This phenomenon is explained by competition of the following processes: UV-induced hydrogen effusion, hydrogen adsorption from the buffer solution, and por-Si oxidation. Regarding the phenomenon a pH change sensor can be proposed. Por-Si layer degradation can be decreased somehow by protective PEDOT layer. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：345 / 349
页数：5
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