Strong luminescence from erbium in Si/Si1-xGex/Si quantum well structures

被引：16
|
作者：
Huda, MQ
Peaker, AR
Evans-Freeman, JH
Houghton, DC
Gillin, WP
机构：
[1] Univ Manchester, Inst Sci, Ctr Elect Mat, Manchester M60 1QD, Lancs, England
[2] Univ Surrey, Guildford GU2 5HX, Surrey, England
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 13期
关键词：
silicon-germanium; silicon; luminescence;
D O I：
10.1049/el:19970750
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sharp, strong luminescence has been obtained from erbium in silicon-germanium quantum well structures. The quantum well layers were implanted with erbium, followed by amorphisation using a silicon implant at 77K. The structures were then recrystallised by solid phase epitaxial regrowth at 550 degrees C. Compared with bulk silicon systems, stronger erbium activity was observed in the quantum well host.
引用
收藏
页码：1182 / 1183
页数：2
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