Making consistent contacts to graphene: effect of architecture and growth induced defects

被引：25

作者：

Bharadwaj, B. Krishna ^{[1
]}

Nath, Digbijoy ^{[1
]}

Pratap, Rudra ^{[1
]}

Raghavan, Srinivasan ^{[1
]}

机构：

[1] Indian Inst Sci, Ctr Nanosci & Engn, Bangalore 560012, Karnataka, India

来源：

NANOTECHNOLOGY | 2016年 / 27卷 / 20期

关键词：

contact resistivity; graphene; growth induced defects; contact architecture; RESISTANCE; QUALITY;

D O I：

10.1088/0957-4484/27/20/205705

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of contact architecture, graphene defect density and metal-semiconductor work function difference on the resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to yield resistivities that are lower, by a factor of four, and most consistent as compared to metal on top of graphene. Growth defects in graphene film were found to further reduce resistivity by a factor of two. Using a combination of method and metal used, the contact resistivity of graphene has been decreased by a factor of 10 to 1200. +/-. 250 Omega mu m using palladium as the contact metal. While the improved consistency is due to the metal being able to contact uncontaminated graphene in the metal on the bottom architecture, lower contact resistivities observed on defective graphene with the same metal are attributed to the increased number of modes of quantum transport in the channel.

引用

页数：6

共 30 条

[11] Correlating defect density with carrier mobility in large-scaled graphene films: Raman spectral signatures for the estimation of defect density [J].

Hwang, Jeong-Yuan ;

Kuo, Chun-Chiang ;

Chen, Li-Chyong ;

Chen, Kuei-Hsien .

NANOTECHNOLOGY, 2010, 21 (46)

[12]

Kasarda M Z M H R, 2011, APPL PHYS LETT, V98

[13] Contact and edge effects in graphene devices [J].

Lee, Eduardo J. H. ;

Balasubramanian, Kannan ;

Weitz, Ralf Thomas ;

Burghard, Marko ;

Kern, Klaus .

NATURE NANOTECHNOLOGY, 2008, 3 (08) :486-490

[14] Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts [J].

Leong, Wei Sun ;

Gong, Hao ;

Thong, John T. L. .

ACS NANO, 2014, 8 (01) :994-1001

[15] Ultraviolet/ozone treatment to reduce metal-graphene contact resistance [J].

Li, Wei ;

Liang, Yiran ;

Yu, Dangmin ;

Peng, Lianmao ;

Pernstich, Kurt P. ;

Shen, Tian ;

Walker, A. R. Hight ;

Cheng, Guangjun ;

Hacker, Christina A. ;

Richter, Curt A. ;

Li, Qiliang ;

Gundlach, David J. ;

Liang, Xuelei .

APPLIED PHYSICS LETTERS, 2013, 102 (18)

[16] Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils [J].

Li, Xuesong ;

Cai, Weiwei ;

An, Jinho ;

Kim, Seyoung ;

Nah, Junghyo ;

Yang, Dongxing ;

Piner, Richard ;

Velamakanni, Aruna ;

Jung, Inhwa ;

Tutuc, Emanuel ;

Banerjee, Sanjay K. ;

Colombo, Luigi ;

Ruoff, Rodney S. .

SCIENCE, 2009, 324 (5932) :1312-1314

[17] Repeated Growth-Etching-Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition [J].

Ma, Teng ;

Ren, Wencai ;

Liu, Zhibo ;

Huang, Le ;

Ma, Lai-Peng ;

Ma, Xiuliang ;

Zhang, Zhiyong ;

Peng, Lan-Mao ;

Cheng, Hui-Ming .

ACS NANO, 2014, 8 (12) :12806-12813

[18] Electronic properties of Au-graphene contacts [J].

Malec, C. E. ;

Davidovic, D. .

PHYSICAL REVIEW B, 2011, 84 (03)

[19] Contact resistivity and current flow path at metal/graphene contact [J].

Nagashio, K. ;

Nishimura, T. ;

Kita, K. ;

Toriumi, A. .

APPLIED PHYSICS LETTERS, 2010, 97 (14)

[20] Contact resistance in graphene-based devices [J].

Russo, S. ;

Craciun, M. F. ;

Yamamoto, M. ;

Morpurgo, A. F. ;

Tarucha, S. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (04) :677-679

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