Low temperature growth of gallium nitride on quartz and sapphire substrates

被引：0

作者：

Goldys, EM ^{[1
]}

Paterson, MJ ^{[1
]}

Zuo, HY ^{[1
]}

Tansley, TL ^{[1
]}

机构：

[1] Macquarie Univ, Semicond Sci & Technol Labs, N Ryde, NSW 2109, Australia

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

low temperature laser and plasma assisted metalorganic chemical vapour deposition; quartz; sapphire; X-ray diffraction; Raman effect; optical absorption;

D O I：

10.4028/www.scientific.net/MSF.264-268.1205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gallium nitride films have been grown using combined ultraviolet excimer laser and microwave plasma enhanced metalorganic chemical vapour deposition. A range of growth conditions was used, including low substrate temperatures between 380 degrees C and 625 degrees C, which enabled the use of quartz substrates, in addition to more common r-plane sapphire. Films grown on quartz and on sapphire were characterised using X-ray diffraction, Raman spectroscopy and optical transmission. Evidence is given that layers grown on quartz have similar structural and optical quality as those grown on sapphire, and both contain large-scale, oriented crystallites embedded in the microcrystalline, randomly oriented medium with intermediate range order and cubic symmetry. The disorder correlates well with the substrate temperature during growth.

引用

页码：1205 / 1208

页数：4

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